MDL provides end-to-end capabilities for advanced electronic materials, device fabrication, and characterization.

Advanced semiconductor crystal growth capabilities such as molecular beam epitaxy enable materials engineered to specific device requirements.

E-beam lithography is used to fabricate devices that require complicated precision nano-scale features such as gratings, optical couplers, holograms, beam shapers, and occulting spots.

The existing capabilities for fabrication and characterization of devices include:

Deposition of Materials:

• Molecular Beam Epitaxy (MBE) for GaAs, GaN, III-Sb, and CCD delta doping
• LPCVD for deposition of low stress silicon nitride, oxide, and doped polysilicon
• E-beam evaporators and sputtering systems
• UHV sputtering systems for superconducting materials
• Atomic Layer deposition (ALD) system
• CVD, Inductively Coupled Plasma (ICP) PECVD, Plasma Enhanced Chemical Vapor Deposition (PECVD) for dielectrics

Lithography Patterning:

• E-Beam lithography (staff operated)
• Contact and non-contact photolithography
• Gray-scale lithography
• Photomask making / inspection / verification

Processing:

• Wet chemical etching
• Ion milling, RIE dry etching (including. ECR & ICP RIEs)
• Deep Trench RIE (DRIE)
• Annealing, diffusion, & oxidation furnaces & RTPs
• Si micromachining (wet, dry, fusion/anodic bonding)
• Wire & die bonding, scribing, dicing
• Flip chip aligning/ bonding
• Superconductor processing

Characterization:

• Electronic characterization (I-V, C-V, Hall)
• Scanning electron microscopy w/ EDAX
• Ellipsometry
• Profilometry
• Atomic force microscopy
• STM & BEEM
• ESCA
• Optoelectronic characterization
• FTIR, photoluminescence
• X-Ray Diffraction